XRAM is a new type of memory which is DRAM-based technology, combing the TLC DRAM and RF DRAM technology patented by Xingmem company.
Differ from the traditional DRAM and SRAM, XRAM device own the special characters as below:
New patent technology, can make much higher density per single die than the DRAM in same condition, this will be helpful to improve the yield and reduce the cost accordingly. In other hand, XRAM KGD product own much smaller die size, it will be easier to integrate with MCU or CPU, enhance the competitive of SOC product.
not only support SRAM interface but also the DRAM and other popular interface will be ready later, RF DRAM patent make the R&D guys ignore the refresh procedure, all the refresh procedure is processed automatically, for the user view, the core chip can access RAM any time without any burst and waiting.
because of no refresh requirement, there is low delay time while the R&W operation, so the Read and Write latency is close to pure SRAM, can reach 10ns level. Compared to the Reduced Latency DRAM, it must be faster by 4-5 times, turn to DRAM, it will be the 10 times if considering the refresh procedure influence.
DRAM-based technology, the XRAM device can support Gigabit level density, it will be the highest density in single planar memory chip, plus the low access time same with SRAM technology, this will be excellent RAM product for the data buffer application.
Cost, 30% die size decrease and 25% yield improvement at least
Speed, 10 times read speed faster than DRAM, the latency is reduced to 10ns
Density, from Megabit to Gigabit level
Power consumption, saving 40% array power consumption
NNo refresh requirement, fully random memory access