X-type random access memory or XRAM is a new type of memory developed from our patented technologies of three-level-cell and refresh-free. Different from the conventional DRAM and SRAM products, XRAM has the following features:
A patented technology offers XRAM higher density on a single die compared to DRAM. It also helps enhance production, reduce costs, and make XRAM KGD products in smaller size, getting integration become easier so as to improve the competitiveness of system products.
A patented technology, supports different SRAM interfaces, DRAM interfaces and other common interfaces. The technology helps engineers realize the internal refresh operation so that user can perform read or write operations at any time without time delay.
Low latency of XRAM products can achieve as close to 10ns as SRAM without external refresh operation. The access speed is about 4 to 5 times faster than RLDRAM, and around 10 times faster than DRAM. This will accelerate the overall system in practice.
Our XRAM products offer large storage capacity at Gigabit level, higher density on a single die, and faster access time that is close to SRAM. Such excellent performance makes XRAM become ideal devices for data cache applications.
Cost, Around 30% decrease in die size, equal to about 25% increase of wafer production
Access Speed, 10 times faster than DRAM with around 10ns access latency
Density, From Megabit to Gigabit level
Power consumption, Around 40% reduction in power consumption
Refresh-free mechanism, Access at any time with no need for external refresh operation