「PC &Server」

Faster speed is always what end users demand for PC and servers. But currently central processing unit (CPU) and related memory chips fail to meet the need. The reasons attributted to the problem are read/ write latency has reached its limits, the development of DRAM-based memory chips is at its peak, and SRAM products cannot satisfy the needs for large memory capacity and lower cost. Under such circumstances, our new type of XRAM memory is born to directly solve the problem. The products we developed will perform better than the popular DRAMs in terms of lower latency, which is close to that of L3 Cache.

By adopting Three-level-cell technology and Refresh-free technology, XRAM products can achieve higher density on a single die and offer SRAM features such as common interfaces and fast read/write performance. All these advantages allow the new products to be used in various applications, such as data storage, computing and cloud-related applications. In addition, the products can save 40% power consumption compared to DRAMs under the same conditions. As a result, XRAM products can be satisfactorily used in random access memory (RAM), solid state drives (SSD), cache memory, computers and servers, delivering faster speed and higher efficiency to improve performance of a whole system.

「Artificial Intelligence (AI)」

Artificial intelligence (AI) is undoubtedly playing a key role in a smart life. It has been applied in a wide range of scenarios, such as self-driving, robotics, industrial automation and public safety. Computing speed and capacity are two main factors that affect the performance of a system. At present, the computing capacity of conventional main processors and some specific ASIC memory products are better than before, however, the responding speed of cache memories becomes a bottleneck of the overall performance.

XRAM products can help break the bottleneck and achieve faster processing speed. Compared to DRAM and SRAM, XRAM can offer 10ns access time and Gigabit storage capacity, whereas the best result that DRAM can achieve in read/write performance is 40ns-50ns and SRAM is faced with problems of lower density and higher cost. By adopting Three-level-cell technology, XRAM can offer much higher density or much smaller die size, which enable the products to be used in different applications. Therefore, our XRAM memory products which do better in read/write performance and storage capacity are ideal for AI applications.

What XRAM can deliver to AI

「Industrial, Medical and Automotive Scenarios」

In the field of industry, medicine and automobile (or IMA), factors like stability, high reliability and real-time response have become increasingly important. In particular, people have higher demands for the real-time response. As the economy is developing, consumers’ demands for big data, cloud computing and personalization become various, driving the overall system to be improved and upgraded. This, in turn, demands the system to run faster and more efficiently. For the hardware design of a system, such a demand can be met by boosting the performance of main processers and memory devices.

For the memory devices to be used in the IMA scenarios, demands for real-time response requires faster access time. XRAM products can achieve access time as close to 10ns as to the performance of L3 cache memory devices. In addition, XRAM offers higher density at Gigabit level and much smaller die size. All these features enable XRAM to be the most ideal products for IMA applications. For example, in the self-driving scenario, latency affects not only user experience but also their safety. The 10ns read and write access time that we offer will give more time to the automatic system to make judgements and take corresponding actions under emergency conditions so that customers’ safety can be guaranteed.

「Communications」

Speed and bandwidth are what communication system has been asking for. We live in a world where a large amount of data is generated in an unprecedented way. To deal with such data, there is a higher demand for the performance of processors and memory devices. Our XRAM memory products perform better in read/write access time and can replace DDR3/4 in the communications applications. Take high-end routers for example, under the same circumstances, XRAM can deliver better results in access latency than DRAM, perform better than RLDRAM memory products which are often used in communication system, and can offer higher storage capacity than SRAM. These advantages will guarantee your system to operate faster and more efficiently. Moreover, our refresh-free XRAM products can help other engineers realize self-refresh operation without a need for external user control when refresh is required for using DRAM devices. This, to some extent, helps reduce the complexity of your system design. Therefore, XRAM can be a better solution to the design of communication system.

Main Features